KM718V847, KM736V747 - (KM736V747 / KM718V847) 128Kx36 & 256Kx18 Flow-Through NtRAM

Samsung Semiconductor

Datasheet Details

Part number	KM718V847, KM736V747
Manufacturer	Samsung Semiconductor
File Size	286.28 KB
Description	(KM736V747 / KM718V847) 128Kx36 & 256Kx18 Flow-Through NtRAM
Datasheet	KM736V747_SamsungSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: KM718V847, KM736V747. Please refer to the document for exact specifications by model.

The KM736V747 and KM718V847 are 4,718,592-bit Synchronous Static SRAMs.

3.3V+0.165V/-0.165V Power Supply.
I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O.
Byte Writable Function.
Enable clock and suspend operation.
Single READ/WRITE control pin.
Self-Timed Write Cycle.
Three Chip Enable for simple depth expansion with no data contention.
A interleaved burst or a linear burst mode.
Asynchronous output enable control.
Power Down mode.

📁 KM718V847 Similar Datasheet

KM718V887 - 256Kx18 Synchronous SRAM (Samsung semiconductor)
KM718V089 - 512Kx36 & 1Mx18 Synchronous SRAM (Samsung semiconductor)
KM718V987 - (KM736V887 / KM718V987) 256Kx36 & 512Kx18 Synchronous SRAM (Samsung semiconductor)
KM718FV4021 - (KM736FV4021 / KM718FV4021) 128Kx36 & 256Kx18 Synchronous Pipelined SRAM (Samsung semiconductor)
KM7101 - 4.9MHz Rail-to-Rail I/O Amplifier (Fairchild Semiconductor)
KM702 - Sensor (MEGATRON)
KM736FV4021 - (KM736FV4021 / KM718FV4021) 128Kx36 & 256Kx18 Synchronous Pipelined SRAM (Samsung semiconductor)
KM736V887 - (KM736V887 / KM718V987) 256Kx36 & 512Kx18 Synchronous SRAM (Samsung semiconductor)

Other Datasheets by Samsung Semiconductor

Published: Jan 12, 2011 |