KM718V847
FEATURES
- 3.3V+0.165V/-0.165V Power Supply.
- I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O
- Byte Writable Function.
- Enable clock and suspend operation.
- Single READ/WRITE control pin.
- Self-Timed Write Cycle.
- Three Chip Enable for simple depth expansion with no data contention
- A interleaved burst or a linear burst mode.
- Asynchronous output enable control.
- Power Down mode.
- TTL-Level Three-State Outputs.
- 100-TQFP-1420A Package.
GENERAL DESCRIPTION
The KM736V747 and KM718V847 are 4,718,592-bit Synchronous Static SRAMs. The Nt RAMTM, or No Turnaround Random Access Memory utilizes all bandwidth in any bination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock. Burst order control must be tied "High or Low". Asynchronous inputs include the sleep mode enable(ZZ). Output Enable controls the outputs at any given time. Write cycles are...
