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KM718V847 Datasheet

Manufacturer: Samsung Semiconductor

This datasheet includes multiple variants, all published together in a single manufacturer document.

KM718V847 datasheet preview

Datasheet Details

Part number KM718V847
Datasheet KM718V847 KM736V747 Datasheet (PDF)
File Size 286.28 KB
Manufacturer Samsung Semiconductor
Description 128Kx36 & 256Kx18 Flow-Through NtRAM
KM718V847 page 2 KM718V847 page 3

KM718V847 Overview

The KM736V747 and KM718V847 are 4,718,592-bit Synchronous Static SRAMs. The NtRAMTM, or No Turnaround Random Access Memory utilizes all bandwidth in any bination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock.

KM718V847 Key Features

  • 3.3V+0.165V/-0.165V Power Supply
  • Byte Writable Function
  • Enable clock and suspend operation
  • Single READ/WRITE control pin
  • Self-Timed Write Cycle
  • Three Chip Enable for simple depth expansion with no data contention
  • A interleaved burst or a linear burst mode
  • Asynchronous output enable control
  • Power Down mode
  • TTL-Level Three-State Outputs
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KM718V987 256Kx36 & 512Kx18 Synchronous SRAM
KM718FV4021 128Kx36 & 256Kx18 Synchronous Pipelined SRAM
KM732V589A 32Kx32-Bit Synchronous Pipelined Burst SRAM
KM732V589L 32Kx32-Bit Synchronous Pipelined Burst SRAM
KM732V595A 32Kx32-Bit Synchronous Pipelined Burst SRAM
KM732V595L 32Kx32-Bit Synchronous Pipelined Burst SRAM
KM732V596A 32Kx32-Bit Synchronous Pipelined Burst SRAM

KM718V847 Distributor

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